C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995

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タイトル: "C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995"

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"Reprinted from Materials science and engineering volumes B36 (1-3) ... and B37 (1-3)"--T.p. verso

Includes bibliographical references and indexes