C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
Bibliographic Information
- Title
- "C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995"
- Statement of Responsibility
- edited by A. Borghesi ... [et al.]
- Publisher
-
- Elsevier
- Publication Year
-
- 1996
- Book size
- 29 cm
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Notes
"Reprinted from Materials science and engineering volumes B36 (1-3) ... and B37 (1-3)"--T.p. verso
Includes bibliographical references and indexes
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Details 詳細情報について
-
- CRID
- 1130000795496731392
-
- NII Book ID
- BA32936818
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- ISBN
- 0444824138
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- LCCN
- 96229399
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- Web Site
- https://lccn.loc.gov/96229399
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- Text Lang
- en
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- Country Code
- ne
-
- Title Language Code
- en
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- Place of Publication
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- Amsterdam ; New York
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- Subject
-
- Data Source
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- CiNii Books