C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995
書誌事項
- タイトル
- "C, H, N and O in Si and characterization and simulation of materials and processes : proceedings of Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and other Elemental Semiconductors, and Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes of the 1995 E-MRS Spring Conference, Strasbourg, France, May 22-26, 1995"
- 責任表示
- edited by A. Borghesi ... [et al.]
- 出版者
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- Elsevier
- 出版年月
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- 1996
- 書籍サイズ
- 29 cm
この図書・雑誌をさがす
注記
"Reprinted from Materials science and engineering volumes B36 (1-3) ... and B37 (1-3)"--T.p. verso
Includes bibliographical references and indexes
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詳細情報 詳細情報について
-
- CRID
- 1130000795496731392
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- NII書誌ID
- BA32936818
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- ISBN
- 0444824138
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- LCCN
- 96229399
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- Web Site
- https://lccn.loc.gov/96229399
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- 本文言語コード
- en
-
- 出版国コード
- ne
-
- タイトル言語コード
- en
-
- 出版地
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- Amsterdam ; New York
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- 件名
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- データソース種別
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- CiNii Books