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The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
Bibliographic Information
- Title
- "The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon"
- Statement of Responsibility
- Sheng S. Li
- Publisher
-
- U.S. G.P.O.
- Publication Year
-
- 1977
- Book size
- 26 cm
- Volume(Year)
-
- 400-33
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Notes
Includes bibliographical references
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Details 詳細情報について
-
- CRID
- 1130000796653082368
-
- NII Book ID
- BB18757485
-
- LCCN
- 76608381
-
- Text Lang
- en
-
- Country Code
- us
-
- Title Language Code
- en
-
- Place of Publication
-
- Washington
-
- Classification
-
- LCC: QC100
- LCC: QC611.8.S5
- DC: 602/.1 s
- DC: 546/.683
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- Data Source
-
- CiNii Books