The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Name: The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
Author: Li, Sheng S.

HathiTrust 1977 Web Site CiNii Available at 1 libraries

Bibliographic Information

Title: "The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon"

Publisher

Publication Year

Volume(Year)

Includes bibliographical references

CRID

1130000796653082368
NII Book ID

BB18757485
LCCN

76608381
Web Site

https://lccn.loc.gov/76608381

https://catalog.hathitrust.org/Record/006865958
Text Lang

en
Country Code

us
Title Language Code

en
Place of Publication
- Washington
Classification
- LCC: QC100
- LCC: QC611.8.S5
- DC: 602/.1 s
- DC: 546/.683
Subject
- LCSH: Silicon -- Electric properties
- LCSH: Semiconductor doping
- LCSH: Electron mobility
- LCSH: Electric resistance
Data Source
- CiNii Books