Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon
Bibliographic Information
- Title
- "Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon"
- Statement of Responsibility
- Martin G. Buehler
- Publisher
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- U.S. G.P.O.
- Publication Year
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- 1976
- Book size
- 26 cm
- Volume(Year)
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- 400-22
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Notes
Includes bibliographical references
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Details 詳細情報について
-
- CRID
- 1130000797178176384
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- NII Book ID
- BB18575455
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- LCCN
- 76600032
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- Text Lang
- en
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- Country Code
- us
-
- Title Language Code
- en
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- Place of Publication
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- Washington
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- Classification
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- LCC: QC100
- LCC: TK7871.85
- DC: 602/.1 s
- DC: 621.3815/2/028
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- Subject
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- LCSH: Semiconductors -- Testing
- LCSH: Silicon -- Testing
- LCSH: Microelectronics
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- Data Source
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- CiNii Books