Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
CiNii
Available at 2 libraries
Bibliographic Information
- Title
- "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment"
- Statement of Responsibility
- editors, F. Rooozeboom ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials
- Publisher
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- Electrochemical Society
- Publication Year
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- c2006
- Book size
- 23 cm
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Notes
Includes bibliographical references and indexes
"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 2 will be held from October 30-November 2, 2006 in the Moon Palace in the scenic city of Cancun, Mexico, as a part of the 210th Meeting of the Electrochemical Society. ..."--p. iii
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Details 詳細情報について
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- CRID
- 1130000797404558464
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- NII Book ID
- BA80737007
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- ISBN
- 1566775027
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- Text Lang
- en
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- Country Code
- us
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- Title Language Code
- en
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- Place of Publication
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- Pennington, NJ
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- Data Source
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- CiNii Books