Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

CiNii Available at 2 libraries

Bibliographic Information

Title
"Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment"
Statement of Responsibility
editors, F. Rooozeboom ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials
Publisher
  • Electrochemical Society
Publication Year
  • c2006
Book size
23 cm

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Notes

Includes bibliographical references and indexes

"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 2 will be held from October 30-November 2, 2006 in the Moon Palace in the scenic city of Cancun, Mexico, as a part of the 210th Meeting of the Electrochemical Society. ..."--p. iii

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Details 詳細情報について

  • CRID
    1130000797404558464
  • NII Book ID
    BA80737007
  • ISBN
    1566775027
  • Text Lang
    en
  • Country Code
    us
  • Title Language Code
    en
  • Place of Publication
    • Pennington, NJ
  • Data Source
    • CiNii Books
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