The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon

HathiTrust 1979 Web Site CiNii Available at 1 libraries

Bibliographic Information

Title
"The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon"
Statement of Responsibility
Sheng S. Li
Publisher
  • U.S. G.P.O.
Publication Year
  • 1979
Book size
26 cm
Volume(Year)
  • no.400:47

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Notes

Includes bibliographical references

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