Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications

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Bibliographic Information

Title
"Transient conductance spectroscopy measurements of defect states in γ-irradiated n-channel silicon field effect transistors with possible γ-dosemeter applications"
Statement of Responsibility
by S. J. Pearton, A. J. Tavendale, A. A. Williams
Publisher
  • Australian Atomic Energy Commission, Research Establishment
Publication Year
  • 1980.12
Book size
30 cm

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Details 詳細情報について

  • CRID
    1130282269487208192
  • NII Book ID
    BA32550978
  • ISBN
    0642597030
  • Text Lang
    en
  • Country Code
    at
  • Title Language Code
    en
  • Place of Publication
    • Lucas Heights
  • Data Source
    • CiNii Books
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