Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

Timans, P.J., Gusev, E. P., Iwai, H., Kwong, D.-L, Öztürk, M. C, Roozeboom, F., Electrochemical Society. Meeting, Electrochemical Society

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

CiNii 所蔵館 1館

書誌事項

タイトル: "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment"

責任表示: editors, P.J. Timans ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials

出版者

Electrochemical Society

出版年月

c2008

書籍サイズ: 23 cm

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注記

Includes bibliographical references and indexes

Other editors: E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom

"From May 18-22, 2008, the international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 4 will be held in Phoenix, the capital and the industrial and commercial center of Arizona (USA), as a part of the 213th Meeting of the Electrochemical Society" -- iii p.

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

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