Ferroelectric-gate field effect transistor memories : device physics and applications

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Bibliographic Information

Title
"Ferroelectric-gate field effect transistor memories : device physics and applications"
Statement of Responsibility
Byung-Eun Park ... [et al.], editors
Publisher
  • Springer
Publication Year
  • c2016
Book size
25 cm

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Notes

Includes bibliographical references

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Details 詳細情報について

  • CRID
    1130282272221849344
  • NII Book ID
    BB22187267
  • ISBN
    9789402408393
  • LCCN
    2016944338
  • Web Site
    https://lccn.loc.gov/2016944338
  • Text Lang
    en
  • Country Code
    ne
  • Title Language Code
    en
  • Place of Publication
    • Dordrecht
  • Data Source
    • CiNii Books
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