Microchannel Wetting for Controllable Patterning and Alignment of Silver Nanowire with High Resolution
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- Bo-Ru Yang
- School of Microelectronics, School of Physics and Engineering, Guangdong Province Key Laboratory of Display Material and Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
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- Wu Cao
- School of Microelectronics, School of Physics and Engineering, Guangdong Province Key Laboratory of Display Material and Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
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- Gui-Shi Liu
- School of Microelectronics, School of Physics and Engineering, Guangdong Province Key Laboratory of Display Material and Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
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- Hui-Jiuan Chen
- SYSU-CMU Shunde International Joint Research Institute, Shunde 528000, People’s Republic of China
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- Yong-Young Noh
- Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3 ga, Jung-gu, Seoul 100-715, Republic of Korea
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- Takeo Minari
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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- Hsiang-Chih Hsiao
- Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangming New District No. 9-2, Tangming Road, Shenzhen 518132, People’s Republic of China
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- Chia-Yu Lee
- Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangming New District No. 9-2, Tangming Road, Shenzhen 518132, People’s Republic of China
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- Han-Ping D. Shieh
- Department of Photonics/Display Institute, National Chiao Tung University, Hsinchu 300, Taiwan
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- Chuan Liu
- School of Microelectronics, School of Physics and Engineering, Guangdong Province Key Laboratory of Display Material and Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
書誌事項
- 公開日
- 2015-09-15
- 資源種別
- journal article
- DOI
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- 10.1021/acsami.5b06370
- 公開者
- American Chemical Society (ACS)
この論文をさがす
説明
Patterning and alignment of conductive nanowires are essential for good electrical isolation and high conductivity in various applications. Herein a facile bottom-up, additive technique is developed to pattern and align silver nanowires (AgNWs) by manipulating wetting of dispersions in microchannels. By forming hydrophobic/hydrophilic micropatterns down to 8 μm with fluoropolymer (Cytop) and SiO2, the aqueous AgNW dispersions with the optimized surface tension and viscosity self-assemble into microdroplets and then dry to form anisotropic AgNW networks. The alignment degree characterized by the full width at half-maximum (FWHM) can be well-controlled from 39.8° to 84.1° by changing the width of microchannels. A mechanism is proposed and validated by statistical analysis on AgNW alignment, and a static model is proposed to guide the patterning of general NWs. The alignment reduced well the electrical resistivity of AgNW networks by a factor of 5 because of the formation of efficient percolation path for carrier conduction.
収録刊行物
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- ACS Applied Materials & Interfaces
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ACS Applied Materials & Interfaces 7 (38), 21433-21441, 2015-09-15
American Chemical Society (ACS)
