Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer

DOI Web Site Web Site 参考文献7件

書誌事項

公開日
1991-08-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.30.l1501
公開者
IOP Publishing

この論文をさがす

説明

<jats:p> We have fabricated PIN photodiodes (PDs) with a thick lattice-mismatched GaInAs absorbing layer and a thin InP cap layer by metal-organic vapor phase epitaxy (MOVPE). The lattice mismatch and the X-ray FWHM of 2.3-µm GaInAs were 0.5% and 138 arcsec, respectively. These PDs exhibited a very low temperature-dependent response from 1.0 to 1.70 µm with quantum efficiencies as high as 45% at 0.78 µm, 86% at 1.3 µm, 85% at 1.55 µm and 70% at 1.75 µm. A reverse leakage current of 30 nA at -2 V bias was measured, and a -3 dB cutoff frequency of 2.5 GHz was obtained for the 110 µm-dia. PDs. </jats:p>

収録刊行物

参考文献 (7)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ