Preparation of Pb(Zr, Ti)O<sub>3</sub> Thin Films Using All Dipivaloylmethane Source Materials by Metalorganic Chemical Vapor Deposition

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公開日
1992-09-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.31.2995
公開者
IOP Publishing

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説明

<jats:p> Pb-bis-dipivaloylmethane [Pb(DPM)<jats:sub>2</jats:sub>], Zr(DPM)<jats:sub>4</jats:sub> and Ti(DPM)<jats:sub>2</jats:sub>(<jats:italic>i</jats:italic>-OC<jats:sub>3</jats:sub>H<jats:sub>7</jats:sub>)<jats:sub>2</jats:sub> are developed as the new chemical vapor deposition (CVD) sources for lead zirconate titanate (PZT) thin film. The growth rate of each of the single metal oxides PbO, ZrO<jats:sub>2</jats:sub> and TiO<jats:sub>2</jats:sub>, was studied as a function of oxygen partial pressure. The growth rates of ZrO<jats:sub>2</jats:sub> and TiO<jats:sub>2</jats:sub> were independent of the input oxygen partial pressure, while the growth rate of PbO increased with increasing input oxygen partial pressure. PZT films were grown on (100) MgO substrates at 2.0 Torr by metalorganic chemical vapor deposition (MOCVD). The film grown at 500°C was amorphous. The film grown at 550°C was a mixed phase of <jats:italic>a</jats:italic>-axis- and <jats:italic>c</jats:italic>-axis-oriented perovskite. The film grown at 600°C was a single-phase <jats:italic>c</jats:italic>-axis-oriented perovskite. </jats:p>

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