Displacement Damage Effects and Related Phase Changes of Ar-Ion-Irradiated BiSrCaCuO System Superconducting Thin Films

DOI Web Site Web Site 被引用文献3件 参考文献22件

書誌事項

公開日
1992-11-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.31.3533
公開者
IOP Publishing

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説明

<jats:p> BiSrCaCuO thin films of 0.5 µm thickness containing mainly the high-<jats:italic>T</jats:italic> <jats:sub>c</jats:sub> phase were irradiated with 100 keV Ar ions up to 5×10<jats:sup>17</jats:sup> ions/cm<jats:sup>2</jats:sup> at 10 K or 300 K. The irradiated thin films were considered to consist of a heavily damaged surface layer and an underlying partly displaced crystalline layer. The transition temperature <jats:italic>T</jats:italic> <jats:sub>c</jats:sub> of the films decreased initially with increasing Ar ion dose and converged at about 63 K for doses larger than 1×10<jats:sup>17</jats:sup> ions/cm<jats:sup>2</jats:sup>. By a subsequent annealing below 800°C, the <jats:italic>T</jats:italic> <jats:sub>c</jats:sub> recovered up to 98 K. The relative X-ray diffraction intensity of the high-<jats:italic>T</jats:italic> <jats:sub>c</jats:sub> phase reached a maximum upon annealing at 700∼730°C. During the annealing, the heavily damaged or amorphous surface layer recrystallizes and regrows into better quality high-<jats:italic>T</jats:italic> <jats:sub>c</jats:sub> phase particles with concomitant formation of the thermodynamically stable Ca-free phase at this low temperature range. </jats:p>

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