Spatial Controllability of Periodic Ripple Structures Generated in Laser Etching of n-GaAs

DOI Web Site Web Site 被引用文献2件 参考文献10件

書誌事項

公開日
1992-12-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.31.4433
公開者
IOP Publishing

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説明

<jats:p> Spatial controllability of periodic ripple structures was investigated in laser etching of n-GaAs. For single-beam etching and holographic etching with high ratios of average spacing of holographic grating to average spacing of ripple structures (Λ<jats:sub>h</jats:sub>/Λ<jats:sub>h</jats:sub>), ripple structures were observed. In particular, in <jats:italic>p</jats:italic>-polarization, spatial fluctuation was greater than that in <jats:italic>s</jats:italic>-polarization. This might occur because phase distortion cannot be eliminated by <jats:italic>p</jats:italic>-polarization beam irradiation. For holographic etching with small Λ<jats:sub>h</jats:sub>/Λ<jats:sub>r</jats:sub> ratios, ripple structures were changed into grating structures because these grating structures might be generated in phase with holographic gratings. </jats:p>

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