Lateral-Solid Phase Epitaxial Growth of Single-Crystal Al(110) Films over Striped SiO<sub>2</sub> Patterns<sup>*</sup>

DOI Web Site Web Site 被引用文献1件 参考文献16件

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公開日
1993-09-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.32.3950
公開者
IOP Publishing

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説明

<jats:p> Aluminum films deposited by the conventional DC magnetron sputtering method over striped SiO<jats:sub>2</jats:sub> patterns were single-crystallized by the lateral-solid phase epitaxial (L-SPE) growth method. Single-crystal Al(110) films deposited on striped Si(100) patterns were used as seed areas. The crystal structure of the films was investigated utilizing transmission electron microscopy (TEM), electron diffraction, X-ray diffraction (XRD) and optical microscopy. The grain density along L-SPE grown aluminum lines is influenced by the epitaxial growth direction. The result suggests the existence of anisotropy in the grain boundary energy of L-SPE grown aluminum films. </jats:p>

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