P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
書誌事項
- 公開日
- 1993-01-01
- 権利情報
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- https://iopscience.iop.org/page/copyright
- https://iopscience.iop.org/info/page/text-and-data-mining
- DOI
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- 10.1143/jjap.32.l8
- 公開者
- IOP Publishing
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説明
<jats:p> P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 32 (1A), L8-, 1993-01-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003446842331904
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- NII論文ID
- 30021861944
- 210000034978
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- NII書誌ID
- AA00690800
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
- https://id.crossref.org/issn/13474065
- https://id.crossref.org/issn/00214922
- http://id.crossref.org/issn/00218979
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- データソース種別
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- Crossref
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