Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
抄録
<jats:p> We have demonstrated the characterization of the local strain structure in thinned Si layers for wafer-on-a-wafer (WOW) applications by using X-ray microdiffraction with a synchrotron radiation source. The microdiffraction reveals the fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects with a sub-micrometer scale. We can separately estimated the in-plane and out-of-plane strain structures in the Si layer, and found that the anisotropic strain is induced in the Si layer between the TSV interconnects. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (5S1), 05ED03-, 2011-05-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003446856221824
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- NII論文ID
- 210000070504
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- データソース種別
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- Crossref
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