Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction

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Abstract

<jats:p> We have demonstrated the characterization of the local strain structure in thinned Si layers for wafer-on-a-wafer (WOW) applications by using X-ray microdiffraction with a synchrotron radiation source. The microdiffraction reveals the fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects with a sub-micrometer scale. We can separately estimated the in-plane and out-of-plane strain structures in the Si layer, and found that the anisotropic strain is induced in the Si layer between the TSV interconnects. </jats:p>

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