Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films

DOI 4 Citations 12 References

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Details 詳細情報について

  • CRID
    1360003449885221760
  • DOI
    10.7567/jjap.50.08kd06
  • ISSN
    13474065
    00214922
    http://id.crossref.org/issn/13474065
  • Data Source
    • Crossref

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