Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (8S2), 08KD06-, 2011-08-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360003449885221760
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- データソース種別
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- Crossref