High-mobility and low-carrier-density sputtered MoS₂film formed by introducing residual sulfur during low-temperature in 3%-H₂annealing for three-dimensional ICs

詳細情報 詳細情報について

• CRID

  1360003449891012864

• NII論文ID

  210000147668

• DOI

  10.7567/jjap.56.04cp06

• ISSN

  13474065

  00214922

• Web Site

  http://stacks.iop.org/1347-4065/56/i=4S/a=04CP06/pdf

  http://stacks.iop.org/1347-4065/56/i=4S/a=04CP06?key=crossref.d4dcd47dc0131b16359abb072fbecfff

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