Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO

DOI PDF 被引用文献16件 参考文献29件
  • C. Zhang
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • S. Fukami
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • K. Watanabe
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • A. Ohkawara
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • S. DuttaGupta
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • H. Sato
    Tohoku University 2 Center for Spintronics Integrated Systems, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • F. Matsukura
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • H. Ohno
    Tohoku University 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

書誌事項

公開日
2016-11-07
資源種別
journal article
DOI
  • 10.1063/1.4967475
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>We study the spin-orbit torque induced magnetization switching in W/CoFeB/MgO heterostructures with W deposited under different sputtering conditions. We show that the crystal structure and resistivity of W depend on the employed sputtering conditions. Switching current of nanoscale devices is smaller while effective anisotropy field is larger for the devices with more resistive W channel deposited at lower sputtering power and higher Ar gas pressure. The effective spin Hall angle evaluated from the switching probability varies by a factor of 2–3 depending on the W resistivity controlled by the sputtering conditions.</jats:p>

収録刊行物

被引用文献 (16)*注記

もっと見る

参考文献 (29)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ