Pretreatment Effects on High-k/In<sub>x</sub>Ga<sub>1–x</sub>As MOS Interface Properties and Their Physical Model
Journal
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- IEEE Journal of the Electron Devices Society
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IEEE Journal of the Electron Devices Society 6 487-493, 2018
Institute of Electrical and Electronics Engineers (IEEE)
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Details 詳細情報について
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- CRID
- 1360004235313932160
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- ISSN
- 21686734
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- Data Source
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- Crossref
- KAKEN