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- Y.-Z. Yoo
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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- Zheng-Wu Jin
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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- T. Chikyow
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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- T. Fukumura
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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- M. Kawasaki
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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- H. Koinuma
- Materials and Structures laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
説明
<jats:p>S-doped ZnO (ZnO:S) film was fabricated by supplying ZnS species from laser ablation of a ZnS target during ZnO growth. Variations of lattice constants and band gaps with respect to S content did not follow Vegard’s law. The ZnO:S film showed semiconducting behavior with lower activation energy and resistivity than those of ZnO owing to higher carrier concentration. Despite the absence of magnetic elements, the large magnetoresistance amount of 26% was observed at 3 K from ZnO:S film.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 81 (20), 3798-3800, 2002-11-11
AIP Publishing