Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

Jun Takahashi, Noboru Ohtani, Masakazu Katsuno, Seiji Shinoyama

doi:10.1016/s0022-0248(97)00289-3

Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions

DOI Web Site Web Site 被引用文献10件

書誌事項

公開日: 1997-11

権利情報

https://www.elsevier.com/tdm/userlicense/1.0/

DOI

10.1016/s0022-0248(97)00289-3

公開者: Elsevier BV

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説明

Abstract Sublimation growth of 6H- and 4H-SiC single crystals in the [1 1¯0 0] and [1 1 2¯ 0] directions has been carried out by the modified-Lely method. Transport properties of the crystals in parallel and perpendicular directions to the [0 0 0 1] basal plane were examined by van der Pauw and resistance bar measurements using 5° off-oriented [0 0 0 1] samples. Van der Pauw resistance asymmetry significantly varied (1 to ⩾ 10 3 ) depending on the growth direction and the polytype of grown crystals, and resistivity anomaly along the off-direction was found for 6H [1 1¯ 0 0] grown crystals. The crystals contained a high density (⩾ 10 4 cm −1 ) of stacking faults lying in the basal plane, which largely hinder electron transport, giving rise to the resistivity anomaly. An atomistic surface model for the stacking fault generation is proposed and the influence of the growth direction and polytype is discussed.