Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

詳細情報 詳細情報について

• CRID

  1360011146514877056

• DOI

  10.1109/ted.2014.2332235

• ISSN

  15579646

  00189383

• Web Site

  http://xplorestaging.ieee.org/ielx7/16/6861490/06849487.pdf?arnumber=6849487

• データソース種別

  • Crossref