Two-dimensional hole gas in organic semiconductors
書誌事項
- 公開日
- 2021-09-06
- 資源種別
- journal article
- 権利情報
-
- https://www.springer.com/tdm
- https://www.springer.com/tdm
- DOI
-
- 10.1038/s41563-021-01074-4
- 10.21203/rs.3.rs-102201/v1
- 10.48550/arxiv.2010.15883
- 公開者
- Springer Science and Business Media LLC
この論文をさがす
説明
<title>Abstract</title> <p>A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional electron gas (2DEG) has been realized in conventional semiconductor interfaces, examples of two-dimensional hole gas (2DHG), which is the counter analogue of 2DEG, are still limited. Here, we report the observation of a 2DHG in solution-processed organic semiconductors in conjunction with an electric double-layer using ionic liquids. A molecularly flat single crystal of high mobility organic semiconductors serves as a defect-free interface that facilitates two-dimensional confinement of high-density holes. Remarkably low sheet resistance of 6 kΩ and high hole gas density of 1014 cm14 result in a metal-insulator transition at ambient pressure. The measured degenerated holes in the organic semiconductors provide a broad opportunity to tailor low-dimensional electronic states using molecularly engineered heterointerfaces.</p>
収録刊行物
-
- Nature Materials
-
Nature Materials 20 (10), 1401-1406, 2021-09-06
Springer Science and Business Media LLC
