Multi-level flash memory device based on stacked anisotropic ReS<sub>2</sub>–boron nitride–graphene heterostructures
-
- Enxiu Wu
- State Key Laboratory of Precision Measurement Technology and Instruments
-
- Yuan Xie
- State Key Laboratory of Precision Measurement Technology and Instruments
-
- Shijie Wang
- State Key Laboratory of Precision Measurement Technology and Instruments
-
- Daihua Zhang
- State Key Laboratory of Precision Measurement Technology and Instruments
-
- Xiaodong Hu
- State Key Laboratory of Precision Measurement Technology and Instruments
-
- Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instruments
書誌事項
- 公開日
- 2020
- 権利情報
-
- http://rsc.li/journals-terms-of-use
- DOI
-
- 10.1039/d0nr03965a
- 公開者
- Royal Society of Chemistry (RSC)
この論文をさがす
説明
<p>Direction-sensitive multi-level flash memory based on stacked anisotropic ReS2–boron nitride–graphene heterostructures.</p>
収録刊行物
-
- Nanoscale
-
Nanoscale 12 (36), 18800-18806, 2020
Royal Society of Chemistry (RSC)
