書誌事項
- 公開日
- 1987
- 権利情報
-
- https://www.cambridge.org/core/terms
- DOI
-
- 10.1557/proc-102-295
- 公開者
- Springer Science and Business Media LLC
この論文をさがす
説明
<jats:title>ABSTRACT</jats:title><jats:p>The oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.</jats:p>
収録刊行物
-
- MRS Proceedings
-
MRS Proceedings 102 295-, 1987
Springer Science and Business Media LLC
