The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm

DOI PDF 被引用文献4件
  • T. P. Pearsall
    Laboratoire Central de Recherches, Thomson/CSF, 91401, Orsay, France
  • M. Papuchon
    Laboratoire Central de Recherches, Thomson/CSF, 91401, Orsay, France

書誌事項

公開日
1978-10-01
DOI
  • 10.1063/1.90447
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>A new p-n photodetector operating at room temperature and sensitive in the near infrared for wavelengths as long as 1.6 μm has been made from Ga0.47In0.53As grown lattice matched on InP substrates by LPE. These detectors display avalanche gain and dark current as low as 2×10−9 A. Measurements of the speed of response at 1.06 μm have shown a detector response time as fast as 250 psec.</jats:p>

収録刊行物

被引用文献 (4)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ