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- Lei Yang
- Center for Nano Technology, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097
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- Franco Cerrina
- Center for Nano Technology, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097
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- James W. Taylor
- Center for Nano Technology, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, Wisconsin 53589-3097
説明
<jats:p>A clear bright peak enhanced x-ray phase mask (BPEXPM) is described. It employs the constructive interference of spatially coherent radiation as opposed to the destructive interference that is used in all the other phase-shifting schemes. This type of mask shows ultrahigh resolution imaging, feature reduction from the mask critical dimension (CD), and enhanced transmission. It has been simulated and verified experimentally with a 320 nm mask CD. Specifically, the BPEXPM exhibits: (1) approximately three times higher effective sensitivity, 40 mJ/cm2 dose to mask for Shipley XP-9947E, a positive-tone chemically amplified resist that normally has a sensitivity of 120 mJ/cm2 in the x-ray region and (2) resolution of 54 nm features in XP-9947E at a 50 μm gap for a 320 nm mask CD. The simulation for the BPEXPM also predicts a wafer image CD of 31 nm at 10 μm gaps with a 150 nm mask CD.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20 (1), 250-256, 2002-01-01
American Vacuum Society