Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

DOI PDF 1 Citations 17 References Open Access
  • Tatsuya Meguro
    Research Institute for Nanodevices, Hiroshima University, Higashihiroshima, Hiroshima, Japan
  • Akinori Takeyama
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan
  • Takeshi Ohshima
    National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan
  • Yasunori Tanaka
    National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan
  • Shin-Ichiro Kuroki
    Research Institute for Nanodevices, Hiroshima University, Higashihiroshima, Hiroshima, Japan

Journal

  • IEEE Electron Device Letters

    IEEE Electron Device Letters 43 (10), 1713-1716, 2022-10

    Institute of Electrical and Electronics Engineers (IEEE)

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