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- Nan Niu
- Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
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- Alexander Woolf
- Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
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- Danqing Wang
- Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
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- Tongtong Zhu
- University of Cambridge 2 Department of Materials Science and Metallurgy, , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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- Qimin Quan
- Rowland Institute at Harvard University 3 , Cambridge, Massachusetts 02142, USA
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- Rachel A. Oliver
- University of Cambridge 2 Department of Materials Science and Metallurgy, , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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- Evelyn L. Hu
- Harvard University 1 School of Engineering and Applied Sciences, , Cambridge, Massachusetts 02138, USA
説明
<jats:p>We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 106 (23), 2015-06-08
AIP Publishing