Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs
-
- Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center Sejong University Seoul 143–747 Korea
-
- Jae Won Yang
- Department of Chemistry Center for Superfunctional Materials Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
-
- Wi Hyoung Lee
- Department of Organic and Nano System Engineering Konkuk University Seoul 143–701 Korea
-
- Rodney S. Ruoff
- Department of Mechanical Engineering and the Materials Science and Engineering Program The University of Texas at Austin Austin TX 78712 United States
-
- Kwang S. Kim
- Department of Chemistry Center for Superfunctional Materials Pohang University of Science and Technology (POSTECH) Pohang 790–784 Korea
-
- Takashi Fukui
- Research Center for Integrated Quantum Electronics Hokkaido University Sapporo 060–8628 Japan
この論文をさがす
説明
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
収録刊行物
-
- Advanced Materials
-
Advanced Materials 25 (47), 6847-6853, 2013-09-25
Wiley
