Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

詳細情報 詳細情報について

• CRID

  1360283690368242176

• DOI

  10.1007/s10825-009-0277-z

• ISSN

  15728137

  15698025

• Web Site

  http://link.springer.com/content/pdf/10.1007/s10825-009-0277-z.pdf

  http://link.springer.com/article/10.1007/s10825-009-0277-z/fulltext.html

  http://link.springer.com/content/pdf/10.1007/s10825-009-0277-z

• データソース種別

  • Crossref
  • KAKEN