Behavior of N atoms after thermal nitridation of Si1−xGex surface
説明
Abstract Behavior of N atoms after thermal nitridation of Si1 − xGex (100) surface in NH3 atmosphere at 400 °C was investigated. X-ray photoelectron spectroscopy (XPS) results show that N atomic amount after nitridation tends to increase with increasing Ge fraction, and amount of N atoms bonded with Ge atoms decreases by heat treatment in H2 at 400 °C. For nitrided Si0.3Ge0.7(100), the bonding between N and Si atoms forms Si3N4 structure whose amount is larger than that for nitrided Si(100). Angle-resolved XPS measurements show that there are N atoms not only at the outermost surface but also beneath surface especially in a deeper region around a few atomic layers for the nitrided Si(100), Si0.3Ge0.7(100) and Ge(100). From these results, it is suggested that penetration of N atoms through around a few atomic layers for Si, Si0.3Ge0.7 and Ge occurs during nitridation, and the N atoms for the nitrided Si0.3Ge0.7(100) dominantly form a Si3N4 structure which stably remains even during heat treatment in H2 at 400 °C.
収録刊行物
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- Thin Solid Films
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Thin Solid Films 520 (8), 3392-3396, 2012-02
Elsevier BV
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キーワード
詳細情報 詳細情報について
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- CRID
- 1360283691164232960
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- ISSN
- 00406090
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
