Evaluation of a-type screw dislocations in<i>m</i>-GaN film by means of X-ray diffractometry
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説明
Dislocations in an epitaxial GaN film with a surface (m-GaN) were investigated by means of X-ray diffractometry. It was clarified that a-type screw dislocations existed in the sample by evaluating diffraction contrast on X-ray topographs (XRTs). In addition, local lattice inclinations of the plane toward the [0001] direction were observed with spatial intervals similar to the separation distances of those a-type screw dislocations slipping on the (0001) basal plane and also on other cross-slip planes in the sample.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 54 (2), 025503-, 2015-01-21
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360284924866477312
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- NII論文ID
- 210000144785
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- ISSN
- 13474065
- 00214922
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- データソース種別
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