Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy

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Bibliographic Information

Published
2017-06
Resource Type
journal article
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  • https://www.elsevier.com/tdm/userlicense/1.0/
  • https://www.elsevier.com/legal/tdmrep-license
DOI
  • 10.1016/j.mee.2017.05.001
Publisher
Elsevier BV

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Description

We have demonstrated the how powerful total photoelectron yield spectroscopy (PYS) is to evaluate the energy distribution of filled defect states for dielectrics such as Si oxide prepared by thermal oxidation and electron beam evaporation. PYS system with wide measurement energy range from 3 to 10 eV have been developed by the combination of the two light sources with Xe-arc and high brightness D2 lamps in addition to the control of ambience in optical path. The filled electronic states density in Si oxide were converted from the measured PYS spectra in the consideration of the measured density of states of valence electron from in-situ XPS measurements. Display Omitted We described the design of PYS with wide measurement energy range from 3 to 10eV.PYS technique has been applied to evaluate the electronic defect states for Si oxide.Electronic defect states density for Si oxide were converted from PYS signals.

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