Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates

DOI Web Site 被引用文献14件 参考文献45件
  • Taiki Inoue
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Daisuke Hasegawa
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Saifullah Badar
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shinya Aikawa
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shohei Chiashi
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Shigeo Maruyama
    Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

説明

We investigate the influence of gas pressure on the growth of horizontally aligned single-walled carbon nanotubes (SWCNTs) on R-cut and r-cut crystal quartz substrates by alcohol catalytic chemical vapor deposition (CVD). The density of horizontally aligned SWCNTs was found to depend highly on gas pressure. A study of the SWCNT growth as a function of CVD time revealed that the density of horizontally aligned SWCNTs continued to increase for 10 min at reduced pressure, whereas the density saturated rapidly at higher pressure even though catalysts were not deactivated. We argue that variation of incubation time for low-pressure CVD is key for independent growth of horizontally aligned SWCNTs and hence higher density growth.

収録刊行物

被引用文献 (14)*注記

もっと見る

参考文献 (45)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ