Effect of crystal orientation on ohmic contact formation for n-type gallium nitride
説明
The present paper describes the influence of surface orientation of n-type GaN on the electrical properties and the interfacial reaction between GaN and Ti during annealing. Although the contact formed on (0001) Ga-face of GaN performs the highest electrical conductance in the as-deposited state, the conductance deteriorates significantly by annealing even at a low temperature of 773 K. A considerable amount of Ti-Ga intermetallic compounds is formed at the deteriorated interfaces, to which the deterioration is attributed.
収録刊行物
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- IOP Conference Series: Materials Science and Engineering
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IOP Conference Series: Materials Science and Engineering 61 012033-, 2014-08-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360285709439586048
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- ISSN
- 1757899X
- 17578981
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- 資料種別
- journal article
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE
