Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status
説明
Abstract This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in comparison to Cu/TaN in the time-to-failure (4200 s versus 240 s, at 4 MV/cm at 200 °C) and in the breakdown activation energy under 4 MV/cm (1.17 eV versus 0.87 eV). Moreover, NiAl was found to form an atomically thin and self-limiting Al oxide layer at the NiAl/SiO2 interface, and this Al oxide layer, together with the large cohesive energy of NiAl, was considered to be possible origin for the excellent reliability. The results demonstrate a great potential of NiAl as a liner- and barrier-free interconnect material.
収録刊行物
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- Applied Surface Science
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Applied Surface Science 497 143810-, 2019-12
Elsevier BV
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詳細情報 詳細情報について
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- CRID
- 1360286991619629440
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- ISSN
- 01694332
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- データソース種別
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- Crossref
- KAKEN
- OpenAIRE