A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐<i>k</i>, and Layered Dielectrics

DOI Web Site Web Site Web Site 被引用文献2件
  • Felix Palumbo
    Unidad de Investigación y Desarrollo de las Ingenierías‐CONICET Facultad Regional Buenos Aires Universidad Tecnológica Nacional (UIDI‐CONICET/FRBA‐UTN) Medrano 951 (C1179AAQ) Buenos Aires Argentina
  • Chao Wen
    Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nanoscience & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
  • Salvatore Lombardo
    Istituto per la Microelettronica e Microsistemi (IMM) Consiglio Nazionale delle Ricerche (CNR) Zona Industriale Ottava Strada, 5 95121 Catania Italy
  • Sebastian Pazos
    Unidad de Investigación y Desarrollo de las Ingenierías‐CONICET Facultad Regional Buenos Aires Universidad Tecnológica Nacional (UIDI‐CONICET/FRBA‐UTN) Medrano 951 (C1179AAQ) Buenos Aires Argentina
  • Fernando Aguirre
    Unidad de Investigación y Desarrollo de las Ingenierías‐CONICET Facultad Regional Buenos Aires Universidad Tecnológica Nacional (UIDI‐CONICET/FRBA‐UTN) Medrano 951 (C1179AAQ) Buenos Aires Argentina
  • Moshe Eizenberg
    Department of Materials Science and Engineering Technion–Israel Institute of Technology Haifa 32000 Israel
  • Fei Hui
    Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nanoscience & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
  • Mario Lanza
    Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nanoscience & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

説明

<jats:title>Abstract</jats:title><jats:p>Thin dielectric films are essential components of most micro‐ and nanoelectronic devices, and they have played a key role in the huge development that the semiconductor industry has experienced during the last 50 years. Guaranteeing the reliability of thin dielectric films has become more challenging, in light of strong demand from the market for improved performance in electronic devices. The degradation and breakdown of thin dielectrics under normal device operation has an enormous technological importance and thus it is widely investigated in traditional dielectrics (e.g., SiO<jats:sub>2</jats:sub>, HfO<jats:sub>2</jats:sub>, and Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>), and it should be further investigated in novel dielectric materials that might be used in future devices (e.g., layered dielectrics). Understanding not only the physical phenomena behind dielectric breakdown but also its statistics is crucial to ensure the reliability of modern and future electronic devices, and it can also be cleverly used for other applications, such as the fabrication of new‐concept resistive switching devices (e.g., nonvolatile memories and electronic synapses). Here, the fundamentals of the dielectric breakdown phenomenon in traditional and future thin dielectrics are revised. The physical phenomena that trigger the onset, structural damage, breakdown statistics, device reliability, technological implications, and perspectives are described.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

問題の指摘

ページトップへ