Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

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Abstract A semi-transparent Cu thin film with a thickness of 40 nm and a tensile strength of 36 MPa onto the glass substrate deposited through a solution-based process, by heat-treating the spin-coated precursor film at 350 °C with Ar gas flowing at a rate of 1.5 L min−1. The Cu thin film is more than ca. 30% transparent in the visible region and exhibits 40−100% reflectance in the infrared region. The electrical resistivity of the Cu thin film is 4.7(6)×10−5 Ω cm.

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