Extension of receptor function theory to include two types of adsorbed oxygen for oxide semiconductor gas sensors

DOI Web Site Web Site 被引用文献11件 参考文献10件

書誌事項

公開日
2012-03
資源種別
journal article
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/j.snb.2012.01.020
公開者
Elsevier BV

この論文をさがす

説明

Abstract Receptor function of oxide semiconductor gas sensors to oxygen and an oxidizing or reducing gas was extended successfully to include two types of adsorbed oxygen, O− and O2−. The receptor function relying on O2− ions is featured by linear dependence of resistance on P O 2 1 / 4 ( P O 2 , partial pressure of oxygen), while that relying O− shows linear dependence on P O 2 1 /2 . As a result, the resistance can be brought to a high value at small P O 2 when O2− ions are formed. The drastic increase of resistance in air under desiccated condition can be accounted for as a result of the formation of O2− ions which is blocked by water vapor in humid conditions. On the response to an oxidizing gas (NO2) in air, O2− ions exert an adverse effect; those increase the gross resistance of the device in air, thus reducing the conventionally defined response to the gas. Those influence on the response to a reducing gas (H2) in a particular way. Owing to a kinetic reason, O2− ions are almost distinguished at steady state under exposure to the gas, rendering only O− ions to be responsible for the response to the gas, and thus contributing to amplify the conventionally defined response.

収録刊行物

被引用文献 (11)*注記

もっと見る

参考文献 (10)*注記

もっと見る

関連プロジェクト

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ