GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation

DOI Web Site Web Site 被引用文献2件 参考文献4件

書誌事項

公開日
1982-10-01
権利情報
  • https://iopscience.iop.org/page/copyright
  • https://iopscience.iop.org/info/page/text-and-data-mining
DOI
  • 10.1143/jjap.21.l639
公開者
IOP Publishing

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説明

<jats:p> A GaInAsP/InP laser (λ=1.3 µm) with a current blocking layer made by Be implantation has been fabricated. Be-ions were implanted with 70 keV into an n-InP substrate at room temperature and 2.2×10<jats:sup>14</jats:sup> cm<jats:sup>-2</jats:sup> of dose. Thermal annealing was applied in a furnace during the LPE (Liquid Phase Epitaxial) growth. The breaking of the forward bias associated with the blocking region was 2 V. The minimum threshold current was 160 mA for 2.5 µm width of waveguide and 250 µm cavity length. </jats:p>

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