LPE Growth of In<sub>1-x</sub>Ga<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub> with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
説明
<jats:p> The growth conditions of In<jats:sub>1-<jats:italic>x</jats:italic> </jats:sub>Ga<jats:sub> <jats:italic>x</jats:italic> </jats:sub>As<jats:sub>1-<jats:italic>y</jats:italic> </jats:sub>P<jats:sub> <jats:italic>y</jats:italic> </jats:sub>, layers on GaAs (111)B substrate and the photoluminescence (PL) properties of these layers are described. The temperature difference liquid phase epitaxial (LPE) method was used for crystal growth. Single PL peak corresponding to band-to-band transition was observed from the layers over the range of 1.73\lesssim<jats:italic>E</jats:italic> <jats:sub>g</jats:sub>\lesssim1.98 eV at 77 K. The half width of the PL band was less than 20 meV and independent of the peak energy. These results show that the grown layers have good crystalline qualities. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 21 (11A), L667-, 1982-11-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566396791222272
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- NII論文ID
- 210000022269
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- ISSN
- 13474065
- 00214922
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- データソース種別
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