0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
説明
<jats:p> Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched those of the Al<jats:sub>0.6</jats:sub>Ga<jats:sub>0.4</jats:sub>As cladding layers. The threshold current density J<jats:sub>th</jats:sub> of the device was 8 kA/cm<jats:sup>2</jats:sup>. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 23 (9A), L740-, 1984-09-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566396791674112
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- NII論文ID
- 210000023636
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- ISSN
- 13474065
- 00214922
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- データソース種別
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