Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (9R), 095601-, 2011-09-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360566399838670592
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- NII論文ID
- 210000139571
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- ISSN
- 13474065
- 00214922
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- データソース種別
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