Catalytic graphitization and Ohmic contact formation on 4H–SiC

DOI PDF 6 Citations
  • Weijie Lu
    Department of Physics, Fisk University, Nashville, Tennessee 37208
  • W. C. Mitchel
    Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright–Patterson Air Force Base, Ohio 45433
  • G. R. Landis
    University of Dayton Research Institute, Dayton, Ohio 45469
  • T. R. Crenshaw
    Department of Physics, Fisk University, Nashville, Tennessee 37208
  • W. Eugene Collins
    Department of Physics, Fisk University, Nashville, Tennessee 37208

Description

<jats:p>Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H–SiC with n-type, C-face, and a doping concentration of 1.8×1019 cm−3 . Only Ni/C and Co/C films exhibit Ohmic contact behavior on SiC with n-type, Si-face, and a doping concentration of 1.6×1018 cm−3. Ni and Co are well known as excellent graphitization catalysts. Raman spectra show that the formation of graphitic carbon is related to the formation of Ohmic contacts in the annealed metal/carbon/SiC structures. Generally accepted catalytic graphitization mechanisms are applied to explain the scanning electron microscopy images, which demonstrate a relationship between the catalytically reacted morphology and Ohmic contact behavior. This study provides evidence that the metals with better catalytic graphitization activities form better Ohmic contacts on metal/carbon/SiC structures.</jats:p>

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