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- Weijie Lu
- Department of Physics, Fisk University, Nashville, Tennessee 37208
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- W. C. Mitchel
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright–Patterson Air Force Base, Ohio 45433
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- G. R. Landis
- University of Dayton Research Institute, Dayton, Ohio 45469
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- T. R. Crenshaw
- Department of Physics, Fisk University, Nashville, Tennessee 37208
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- W. Eugene Collins
- Department of Physics, Fisk University, Nashville, Tennessee 37208
説明
<jats:p>Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H–SiC with n-type, C-face, and a doping concentration of 1.8×1019 cm−3 . Only Ni/C and Co/C films exhibit Ohmic contact behavior on SiC with n-type, Si-face, and a doping concentration of 1.6×1018 cm−3. Ni and Co are well known as excellent graphitization catalysts. Raman spectra show that the formation of graphitic carbon is related to the formation of Ohmic contacts in the annealed metal/carbon/SiC structures. Generally accepted catalytic graphitization mechanisms are applied to explain the scanning electron microscopy images, which demonstrate a relationship between the catalytically reacted morphology and Ohmic contact behavior. This study provides evidence that the metals with better catalytic graphitization activities form better Ohmic contacts on metal/carbon/SiC structures.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 93 (9), 5397-5403, 2003-05-01
AIP Publishing